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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB880 DESCRIPTION *With TO-220C package *DARLNGTON *High DC current gain *Low collector saturation voltage *Complement to type 2SD1190 APPLICATIONS *Motor drivers,printer hammer drivers,relay drivers,voltage regulators PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.75 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -70 -60 -6 -4 -6 30 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current Transition frequency DC current gain CONDITIONS IC=-50mA, RBE=> IC=-5mA ,IE=0 IC=-2A ,IB=-4mA IC=-2A ,IB=-4mA VCB=-40V, IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-5V IC=-2A ; VCE=-2V 2000 20 5000 MIN -60 -70 -1.0 TYP. 2SB880 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO fT hFE MAX UNIT V V -1.5 -2.0 -0.1 -3.0 V V mA mA MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-2A ;IB1=-IB2=-4mA VCC=-20V,RL=10D 0.5 1.4 1.2 s s s 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB880 Fig.2 Outline dimensions 3 |
Price & Availability of 2SB880
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